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| RB400D Diodes Schottky barrier diode RB400D !Applications High frequency rectification Switching power supply !External dimensions (Units : mm) 2.90.2 1.90.2 0.95 0.95 1.1 -0.1 0.80.1 +0.2 0.4 -0.05 0.15 -0.06 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.5 3 125 Unit V V A A C C -40~+125 !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR1 IR2 Ct Ct Min. - - - - - Typ. - - - 125 20 Max. 0.55 50 30 - - Unit V A A pF pF IF=0.5A VR=30V VR=10V VR=0V, f=1MHz VR=10V, f=1MHz Conditions Note) ESD Sensitive product handling required. 0.3~0.6 D3A !Features 1) Small surface mounting type. (SMD3) 2) Low IR. (IR=1A Typ.) 3) High reliability. 1.6 +0.2 -0.1 2.80.2 0~0.1 +0.1 +0.1 RB400D Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 100m 10m 1m 100 10 1 0 Ta =1 25 C 75 C 25 C 10m Typ. pulse measurement Ta=125C 1 000 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 1m 100 100 Ta=75C -25 C 10 Ta=25C Typ. pulse measurement 10 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics POWER DISSIPATION : Pd (W) 0.5 0 25 125 AMBIENT TEMPERATURE : Ta (C) Fig.4 Derating curve |
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